IXSH10N60B2D1 vs IXSH30N60B2D1

Product Attributes

Part Number IXSH10N60B2D1 IXSH30N60B2D1
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IXSH10N60B2D1 IXSH30N60B2D1
Product Status Obsolete Obsolete
IGBT Type PT PT
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 20 A 48 A
Current - Collector Pulsed (Icm) 30 A 90 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 10A 2.5V @ 15V, 24A
Power - Max 100 W 250 W
Switching Energy 430µJ (off) 550µJ (off)
Input Type Standard Standard
Gate Charge 17 nC 50 nC
Td (on/off) @ 25°C 30ns/180ns 30ns/130ns
Test Condition 480V, 10A, 30Ohm, 15V 400V, 24A, 5Ohm, 15V
Reverse Recovery Time (trr) 25 ns 30 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247AD TO-247AD