IXKH35N60C5 vs IXKP35N60C5

Product Attributes

Part Number IXKH35N60C5 IXKP35N60C5
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXKH35N60C5 IXKP35N60C5
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc) 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 18A, 10V 100mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 3.9V @ 1.2mA 3.9V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V 70 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2800 pF @ 100 V 2800 pF @ 100 V
FET Feature Super Junction -
Power Dissipation (Max) - -
Operating Temperature -55°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247AD TO-220-3
Package / Case TO-247-3 TO-220-3