IXGX50N60B2D1 vs IXGX60N60B2D1

Product Attributes

Part Number IXGX50N60B2D1 IXGX60N60B2D1
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IXGX50N60B2D1 IXGX60N60B2D1
Product Status Obsolete Obsolete
IGBT Type PT PT
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 75 A 75 A
Current - Collector Pulsed (Icm) 200 A 300 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 40A 1.8V @ 15V, 50A
Power - Max 400 W 500 W
Switching Energy 550µJ (off) 1mJ (off)
Input Type Standard Standard
Gate Charge 140 nC 170 nC
Td (on/off) @ 25°C 18ns/190ns 28ns/160ns
Test Condition 480V, 40A, 5Ohm, 15V 400V, 50A, 3.3Ohm, 15V
Reverse Recovery Time (trr) 35 ns 35 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 Variant TO-247-3 Variant
Supplier Device Package PLUS247™-3 PLUS247™-3