IXSX35N120BD1 vs IXGX35N120BD1

Product Attributes

Part Number IXSX35N120BD1 IXGX35N120BD1
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IXSX35N120BD1 IXGX35N120BD1
Product Status Obsolete Active
IGBT Type PT -
Voltage - Collector Emitter Breakdown (Max) 1200 V 1200 V
Current - Collector (Ic) (Max) 70 A 70 A
Current - Collector Pulsed (Icm) 140 A 140 A
Vce(on) (Max) @ Vge, Ic 3.6V @ 15V, 35A 3.3V @ 15V, 35A
Power - Max 300 W 350 W
Switching Energy 5mJ (off) 3.8mJ (off)
Input Type Standard Standard
Gate Charge 120 nC 170 nC
Td (on/off) @ 25°C 36ns/160ns 50ns/180ns
Test Condition 960V, 35A, 5Ohm, 15V 960V, 35A, 5Ohm, 15V
Reverse Recovery Time (trr) 40 ns 60 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 Variant TO-247-3 Variant
Supplier Device Package PLUS247™-3 PLUS247™-3