IXGX32N170AH1 vs IXGX32N170H1

Product Attributes

Part Number IXGX32N170AH1 IXGX32N170H1
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IXGX32N170AH1 IXGX32N170H1
Product Status Obsolete Obsolete
IGBT Type NPT NPT
Voltage - Collector Emitter Breakdown (Max) 1700 V 1700 V
Current - Collector (Ic) (Max) 32 A 75 A
Current - Collector Pulsed (Icm) 110 A 200 A
Vce(on) (Max) @ Vge, Ic 5V @ 15V, 21A 3.3V @ 15V, 32A
Power - Max 350 W 350 W
Switching Energy 4.1mJ (on), 1.25mJ (off) 15mJ (off)
Input Type Standard Standard
Gate Charge 157 nC 155 nC
Td (on/off) @ 25°C 27ns/270ns 45ns/270ns
Test Condition 850V, 32A, 2.7Ohm, 15V 1360V, 32A, 2.7Ohm, 15V
Reverse Recovery Time (trr) 150 ns 150 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 Variant TO-247-3 Variant
Supplier Device Package PLUS247™-3 PLUS247™-3