IXGR32N90B2D1 vs IXGT32N90B2D1

Product Attributes

Part Number IXGR32N90B2D1 IXGT32N90B2D1
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IXGR32N90B2D1 IXGT32N90B2D1
Product Status Active Active
IGBT Type PT -
Voltage - Collector Emitter Breakdown (Max) 900 V 900 V
Current - Collector (Ic) (Max) 47 A 64 A
Current - Collector Pulsed (Icm) 200 A 200 A
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 32A 2.7V @ 15V, 32A
Power - Max 160 W 300 W
Switching Energy 2.2mJ (off) 2.2mJ (off)
Input Type Standard Standard
Gate Charge 89 nC 89 nC
Td (on/off) @ 25°C 20ns/260ns 20ns/260ns
Test Condition 720V, 32A, 5Ohm, 15V 720V, 32A, 5Ohm, 15V
Reverse Recovery Time (trr) 190 ns 190 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount
Package / Case TO-247-3 TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package ISOPLUS247™ TO-268AA