IXGQ28N120BD1 vs IXGT28N120BD1

Product Attributes

Part Number IXGQ28N120BD1 IXGT28N120BD1
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IXGQ28N120BD1 IXGT28N120BD1
Product Status Active Active
IGBT Type - PT
Voltage - Collector Emitter Breakdown (Max) 1200 V 1200 V
Current - Collector (Ic) (Max) 50 A 50 A
Current - Collector Pulsed (Icm) 150 A 150 A
Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 28A 3.5V @ 15V, 28A
Power - Max 250 W 250 W
Switching Energy 2mJ (off) 2.2mJ (off)
Input Type Standard Standard
Gate Charge 92 nC 92 nC
Td (on/off) @ 25°C 30ns/180ns 30ns/210ns
Test Condition 960V, 28A, 5Ohm, 15V 960V, 28A, 5Ohm, 15V
Reverse Recovery Time (trr) 40 ns 40 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount
Package / Case TO-3P-3, SC-65-3 TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package TO-3P TO-268AA