IXGQ20N120BD1 vs IXGT20N120BD1

Product Attributes

Part Number IXGQ20N120BD1 IXGT20N120BD1
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IXGQ20N120BD1 IXGT20N120BD1
Product Status Active Active
IGBT Type - -
Voltage - Collector Emitter Breakdown (Max) 1200 V 1200 V
Current - Collector (Ic) (Max) 40 A 40 A
Current - Collector Pulsed (Icm) 100 A 100 A
Vce(on) (Max) @ Vge, Ic 3.4V @ 15V, 20A 3.4V @ 15V, 20A
Power - Max 190 W 190 W
Switching Energy 2.1mJ (off) 2.1mJ (off)
Input Type Standard Standard
Gate Charge 62 nC 72 nC
Td (on/off) @ 25°C 20ns/270ns 25ns/150ns
Test Condition 960V, 20A, 10Ohm, 15V 960V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr) 40 ns 40 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount
Package / Case TO-3P-3, SC-65-3 TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package TO-3P TO-268AA