IXGR40N60B2D1 vs IXGR50N60B2D1

Product Attributes

Part Number IXGR40N60B2D1 IXGR50N60B2D1
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IXGR40N60B2D1 IXGR50N60B2D1
Product Status Obsolete Obsolete
IGBT Type PT -
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 60 A 68 A
Current - Collector Pulsed (Icm) 200 A 300 A
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 30A 2.2V @ 15V, 40A
Power - Max 167 W 200 W
Switching Energy 400µJ (off) 550µJ (off)
Input Type Standard Standard
Gate Charge 100 nC 140 nC
Td (on/off) @ 25°C 18ns/130ns 18ns/190ns
Test Condition 400V, 30A, 3.3Ohm, 15V 480V, 40A, 5Ohm, 15V
Reverse Recovery Time (trr) 25 ns 35 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package ISOPLUS247™ ISOPLUS247™