IXGR35N120BD1 vs IXGR35N120D1

Product Attributes

Part Number IXGR35N120BD1 IXGR35N120D1
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IXGR35N120BD1 IXGR35N120D1
Product Status Active Active
IGBT Type - -
Voltage - Collector Emitter Breakdown (Max) 1200 V 1200 V
Current - Collector (Ic) (Max) 54 A -
Current - Collector Pulsed (Icm) 200 A -
Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 35A -
Power - Max 250 W -
Switching Energy 900µJ (on), 3.8mJ (off) -
Input Type Standard Standard
Gate Charge 140 nC -
Td (on/off) @ 25°C 40ns/270ns -
Test Condition 960V, 35A, 3Ohm, 15V -
Reverse Recovery Time (trr) 40 ns -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package ISOPLUS247™ ISOPLUS247™