IXGQ50N60B4D1 vs IXGQ50N60C4D1

Product Attributes

Part Number IXGQ50N60B4D1 IXGQ50N60C4D1
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IXGQ50N60B4D1 IXGQ50N60C4D1
Product Status Obsolete Obsolete
IGBT Type PT PT
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 100 A 90 A
Current - Collector Pulsed (Icm) 230 A 220 A
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 36A 2.3V @ 15V, 36A
Power - Max 300 W 300 W
Switching Energy 930µJ (on), 1mJ (off) 950µJ (on), 840µJ (off)
Input Type Standard Standard
Gate Charge 110 nC 113 nC
Td (on/off) @ 25°C 37ns/330ns 40ns/270ns
Test Condition 400V, 36A, 10Ohm, 15V 400V, 36A, 10Ohm, 15V
Reverse Recovery Time (trr) 25 ns 25 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3
Supplier Device Package TO-3P TO-3P