IXGP8N100 vs IXGP4N100

Product Attributes

Part Number IXGP8N100 IXGP4N100
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IXGP8N100 IXGP4N100
Product Status Obsolete Active
IGBT Type PT -
Voltage - Collector Emitter Breakdown (Max) 1000 V 1000 V
Current - Collector (Ic) (Max) 16 A 8 A
Current - Collector Pulsed (Icm) 32 A 16 A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 8A 2.7V @ 15V, 4A
Power - Max 54 W 40 W
Switching Energy 2.3mJ (off) 900µJ (off)
Input Type Standard Standard
Gate Charge 26.5 nC 13.6 nC
Td (on/off) @ 25°C 15ns/600ns 20ns/390ns
Test Condition 800V, 8A, 120Ohm, 15V 800V, 4A, 120Ohm, 15V
Reverse Recovery Time (trr) - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-220-3
Supplier Device Package TO-220-3 TO-220-3