IXGP12N100 vs IXGP2N100

Product Attributes

Part Number IXGP12N100 IXGP2N100
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IXGP12N100 IXGP2N100
Product Status Active Active
IGBT Type - -
Voltage - Collector Emitter Breakdown (Max) 1000 V 1000 V
Current - Collector (Ic) (Max) 24 A 4 A
Current - Collector Pulsed (Icm) 48 A 8 A
Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 12A 2.7V @ 15V, 2A
Power - Max 100 W 25 W
Switching Energy 2.5mJ (off) 560µJ (off)
Input Type Standard Standard
Gate Charge 65 nC 7.8 nC
Td (on/off) @ 25°C 100ns/850ns 15ns/300ns
Test Condition 800V, 12A, 120Ohm, 15V 800V, 2A, 150Ohm, 15V
Reverse Recovery Time (trr) - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-220-3
Supplier Device Package TO-220-3 TO-220-3