IXGK82N120A3 vs IXGK82N120B3

Product Attributes

Part Number IXGK82N120A3 IXGK82N120B3
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IXGK82N120A3 IXGK82N120B3
Product Status Active Active
IGBT Type PT PT
Voltage - Collector Emitter Breakdown (Max) 1200 V 1200 V
Current - Collector (Ic) (Max) 260 A 230 A
Current - Collector Pulsed (Icm) 580 A 500 A
Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 82A 3.2V @ 15V, 82A
Power - Max 1250 W 1250 W
Switching Energy 5.5mJ (on), 12.5mJ (off) 5mJ (on), 3.3mJ (off)
Input Type Standard Standard
Gate Charge 340 nC 350 nC
Td (on/off) @ 25°C 34ns/265ns 30ns/210ns
Test Condition 600V, 80A, 2Ohm, 15V 600V, 80A, 2Ohm, 15V
Reverse Recovery Time (trr) - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-264-3, TO-264AA TO-264-3, TO-264AA
Supplier Device Package TO-264 (IXGK) TO-264 (IXGK)