IXGQ35N120BD1 vs IXGK35N120BD1

Product Attributes

Part Number IXGQ35N120BD1 IXGK35N120BD1
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IXGQ35N120BD1 IXGK35N120BD1
Product Status Active Active
IGBT Type - -
Voltage - Collector Emitter Breakdown (Max) 1200 V 1200 V
Current - Collector (Ic) (Max) 75 A 70 A
Current - Collector Pulsed (Icm) 200 A 140 A
Vce(on) (Max) @ Vge, Ic 3.3V @ 15V, 35A 3.3V @ 15V, 35A
Power - Max 400 W 350 W
Switching Energy 900µJ (on), 3.8mJ (off) 3.8mJ (off)
Input Type Standard Standard
Gate Charge 140 nC 170 nC
Td (on/off) @ 25°C 40ns/270ns 50ns/180ns
Test Condition 960V, 35A, 3Ohm, 15V 960V, 35A, 5Ohm, 15V
Reverse Recovery Time (trr) 40 ns 60 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-3P-3, SC-65-3 TO-264-3, TO-264AA
Supplier Device Package TO-3P TO-264 (IXGK)