IXGH50N90B2D1 vs IXGK50N90B2D1

Product Attributes

Part Number IXGH50N90B2D1 IXGK50N90B2D1
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IXGH50N90B2D1 IXGK50N90B2D1
Product Status Active Active
IGBT Type PT PT
Voltage - Collector Emitter Breakdown (Max) 900 V 900 V
Current - Collector (Ic) (Max) 75 A 75 A
Current - Collector Pulsed (Icm) 200 A 200 A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 50A 2.7V @ 15V, 50A
Power - Max 400 W 400 W
Switching Energy 4.7mJ (off) 4.7mJ (off)
Input Type Standard Standard
Gate Charge 135 nC 135 nC
Td (on/off) @ 25°C 20ns/350ns 20ns/350ns
Test Condition 720V, 50A, 5Ohm, 15V 720V, 50A, 5Ohm, 15V
Reverse Recovery Time (trr) 200 ns 200 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-264-3, TO-264AA
Supplier Device Package TO-247AD TO-264 (IXGK)