IXGH32N120A3 vs IXGH32N100A3

Product Attributes

Part Number IXGH32N120A3 IXGH32N100A3
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IXGH32N120A3 IXGH32N100A3
Product Status Active Active
IGBT Type PT PT
Voltage - Collector Emitter Breakdown (Max) 1200 V 1000 V
Current - Collector (Ic) (Max) 75 A 75 A
Current - Collector Pulsed (Icm) 230 A 200 A
Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 32A 2.2V @ 15V, 32A
Power - Max 300 W 300 W
Switching Energy - 2.6mJ (on), 9.5mJ (off)
Input Type Standard Standard
Gate Charge 89 nC 87 nC
Td (on/off) @ 25°C - 24ns/385ns
Test Condition - 800V, 32A, 10Ohm, 15V
Reverse Recovery Time (trr) - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247AD TO-247AD