IXGH30N60BD1 vs IXGH30N60B2D1

Product Attributes

Part Number IXGH30N60BD1 IXGH30N60B2D1
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IXGH30N60BD1 IXGH30N60B2D1
Product Status Obsolete Obsolete
IGBT Type - PT
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 60 A 70 A
Current - Collector Pulsed (Icm) 120 A 150 A
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 30A 1.8V @ 15V, 24A
Power - Max 200 W 190 W
Switching Energy 1mJ (off) 320µJ (off)
Input Type Standard Standard
Gate Charge 110 nC 66 nC
Td (on/off) @ 25°C 25ns/130ns 13ns/110ns
Test Condition 480V, 30A, 4.7Ohm, 15V 400V, 24A, 5Ohm, 15V
Reverse Recovery Time (trr) 25 ns 25 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247AD TO-247AD