IXGH30N60B2 vs IXGH50N60B2

Product Attributes

Part Number IXGH30N60B2 IXGH50N60B2
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IXGH30N60B2 IXGH50N60B2
Product Status Obsolete Obsolete
IGBT Type PT PT
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 70 A 75 A
Current - Collector Pulsed (Icm) 150 A 200 A
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 24A 2V @ 15V, 40A
Power - Max 190 W 400 W
Switching Energy 320µJ (off) 550µJ (off)
Input Type Standard Standard
Gate Charge 66 nC 140 nC
Td (on/off) @ 25°C 13ns/110ns 18ns/190ns
Test Condition 400V, 24A, 5Ohm, 15V 480V, 40A, 5Ohm, 15V
Reverse Recovery Time (trr) - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247AD TO-247AD