IXGH30N60B2 vs IXGH30N60B

Product Attributes

Part Number IXGH30N60B2 IXGH30N60B
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IXGH30N60B2 IXGH30N60B
Product Status Obsolete Obsolete
IGBT Type PT -
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 70 A 60 A
Current - Collector Pulsed (Icm) 150 A 120 A
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 24A 1.8V @ 15V, 30A
Power - Max 190 W 200 W
Switching Energy 320µJ (off) 1.3mJ (off)
Input Type Standard Standard
Gate Charge 66 nC 125 nC
Td (on/off) @ 25°C 13ns/110ns 25ns/130ns
Test Condition 400V, 24A, 5Ohm, 15V 480V, 30A, 4.7Ohm, 15V
Reverse Recovery Time (trr) - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247AD TO-247AD