IXGH32N60C vs IXGH12N60C

Product Attributes

Part Number IXGH32N60C IXGH12N60C
Manufacturer IXYS IXYS
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
IXGH32N60C IXGH12N60C
Product Status Obsolete Obsolete
IGBT Type - -
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 60 A 24 A
Current - Collector Pulsed (Icm) 120 A 48 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 32A 2.7V @ 15V, 12A
Power - Max 200 W 100 W
Switching Energy 320µJ (off) 90µJ (off)
Input Type Standard Standard
Gate Charge 110 nC 32 nC
Td (on/off) @ 25°C 25ns/85ns 20ns/60ns
Test Condition 480V, 32A, 4.7Ohm, 15V 480V, 12A, 18Ohm, 15V
Reverse Recovery Time (trr) - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247AD TO-247AD