IXFX64N60P vs IXFX64N50P

Product Attributes

Part Number IXFX64N60P IXFX64N50P
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXFX64N60P IXFX64N50P
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 64A (Tc) 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 96mOhm @ 500mA, 10V 85mOhm @ 32A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA 5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V 150 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 12000 pF @ 25 V 8700 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1040W (Tc) 830W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PLUS247™-3 PLUS247™-3
Package / Case TO-247-3 Variant TO-247-3 Variant