IXFX30N50Q vs IXFX32N50Q

Product Attributes

Part Number IXFX30N50Q IXFX32N50Q
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXFX30N50Q IXFX32N50Q
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc) 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 15A, 10V 160mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V 150 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3950 pF @ 25 V 3950 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 416W (Tc) 416W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PLUS247™-3 PLUS247™-3
Package / Case TO-247-3 Variant TO-247-3 Variant