IXFX170N20T vs IXFX170N20P

Product Attributes

Part Number IXFX170N20T IXFX170N20P
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXFX170N20T IXFX170N20P
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 170A (Tc) 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 60A, 10V 14mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 4mA 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 265 nC @ 10 V 185 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 19600 pF @ 25 V 11400 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1150W (Tc) 1250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PLUS247™-3 PLUS247™-3
Package / Case TO-247-3 Variant TO-247-3 Variant