IXFR4N100Q vs IXFT4N100Q

Product Attributes

Part Number IXFR4N100Q IXFT4N100Q
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXFR4N100Q IXFT4N100Q
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 3.5A (Tc) 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 2A, 10V 3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 5V @ 1.5mA 5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V 39 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1050 pF @ 25 V 1050 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 80W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount
Supplier Device Package ISOPLUS247™ TO-268AA
Package / Case TO-247-3 TO-268-3, D³Pak (2 Leads + Tab), TO-268AA