IXFT30N60P vs IXFT30N60Q

Product Attributes

Part Number IXFT30N60P IXFT30N60Q
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXFT30N60P IXFT30N60Q
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc) 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 240mOhm @ 15A, 10V 230mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 4mA 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 82 nC @ 10 V 125 nC @ 10 V
Vgs (Max) ±30V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4000 pF @ 25 V 4700 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 500W (Tc) 500W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-268AA TO-268AA
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA