IXFR26N60Q vs IXFT26N60Q

Product Attributes

Part Number IXFR26N60Q IXFT26N60Q
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXFR26N60Q IXFT26N60Q
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 23A (Tc) 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 250mOhm @ 13A, 10V 250mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V 200 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5100 pF @ 25 V 5100 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 310W (Tc) 360W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount
Supplier Device Package ISOPLUS247™ TO-268AA
Package / Case TO-247-3 TO-268-3, D³Pak (2 Leads + Tab), TO-268AA