IXFR90N30 vs IXFR90N20

Product Attributes

Part Number IXFR90N30 IXFR90N20
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXFR90N30 IXFR90N20
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V 200 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc) 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 33mOhm @ 45A, 10V -
Vgs(th) (Max) @ Id 4.5V @ 4mA -
Gate Charge (Qg) (Max) @ Vgs 360 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 10000 pF @ 25 V -
FET Feature - -
Power Dissipation (Max) 417W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Through Hole Through Hole
Supplier Device Package ISOPLUS247™ ISOPLUS247™
Package / Case TO-247-3 TO-247-3