IXFR10N100Q vs IXFR12N100Q

Product Attributes

Part Number IXFR10N100Q IXFR12N100Q
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXFR10N100Q IXFR12N100Q
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc) 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 5A, 10V 1.1Ohm @ 6A, 10V
Vgs(th) (Max) @ Id 5.5V @ 4mA 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 90 nC @ 10 V 90 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2900 pF @ 25 V 2900 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 250W (Tc) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package ISOPLUS247™ ISOPLUS247™
Package / Case TO-247-3 TO-247-3