IXFQ50N50P3 vs IXFQ60N50P3

Product Attributes

Part Number IXFQ50N50P3 IXFQ60N50P3
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXFQ50N50P3 IXFQ60N50P3
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 120mOhm @ 25A, 10V 100mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 85 nC @ 10 V 96 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 4335 pF @ 25 V 6250 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 960W (Tc) 1040W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-3P TO-3P
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3