IXFQ30N60X vs IXFQ50N60X

Product Attributes

Part Number IXFQ30N60X IXFQ50N60X
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXFQ30N60X IXFQ50N60X
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc) 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 155mOhm @ 15A, 10V 73mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V 116 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2270 pF @ 25 V 4660 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 500W (Tc) 660W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-3P TO-3P
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3