IXFP18N65X2 vs IXFP18N65X2M

Product Attributes

Part Number IXFP18N65X2 IXFP18N65X2M
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXFP18N65X2 IXFP18N65X2M
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc) 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 200mOhm @ 9A, 10V 200mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 5V @ 1.5mA 5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V 29 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1520 pF @ 25 V 1520 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 290W (Tc) 290W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 TO-220 Isolated Tab
Package / Case TO-220-3 TO-220-3 Full Pack, Isolated Tab