IXFN70N120SK vs IXFN50N120SK

Product Attributes

Part Number IXFN70N120SK IXFN50N120SK
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXFN70N120SK IXFN50N120SK
Product Status Active Active
FET Type N-Channel N-Channel
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V 1200 V
Current - Continuous Drain (Id) @ 25°C 68A (Tc) 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V 20V
Rds On (Max) @ Id, Vgs 34mOhm @ 50A, 20V 52mOhm @ 40A, 20V
Vgs(th) (Max) @ Id 4V @ 15mA 2.8V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 161 nC @ 20 V 115 nC @ 20 V
Vgs (Max) +20V, -5V +20V, -5V
Input Capacitance (Ciss) (Max) @ Vds 2790 pF @ 1000 V 1895 pF @ 1000 V
FET Feature - -
Power Dissipation (Max) - -
Operating Temperature -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ)
Mounting Type Chassis Mount Chassis Mount
Supplier Device Package SOT-227B SOT-227B
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC