IXFN30N120P vs IXFL30N120P

Product Attributes

Part Number IXFN30N120P IXFL30N120P
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXFN30N120P IXFL30N120P
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200 V 1200 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc) 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 350mOhm @ 500mA, 10V 380mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 6.5V @ 1mA 6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 310 nC @ 10 V 310 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 19000 pF @ 25 V 19000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 890W (Tc) 357W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount Through Hole
Supplier Device Package SOT-227B ISOPLUSi5-Pak™
Package / Case SOT-227-4, miniBLOC ISOPLUSi5-Pak™