IXFN27N80 vs IXFN27N80Q

Product Attributes

Part Number IXFN27N80 IXFN27N80Q
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXFN27N80 IXFN27N80Q
Product Status Not For New Designs Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 27A (Tc) 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V, 15V 10V
Rds On (Max) @ Id, Vgs 300mOhm @ 13.5A, 10V 320mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 8mA 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 400 nC @ 10 V 170 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 9740 pF @ 25 V 7600 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 520W (Tc) 520W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount Chassis Mount
Supplier Device Package SOT-227B SOT-227B
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC