IXFN24N100 vs IXFN23N100

Product Attributes

Part Number IXFN24N100 IXFN23N100
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXFN24N100 IXFN23N100
Product Status Not For New Designs Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 24A (Tc) 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 390mOhm @ 12A, 10V -
Vgs(th) (Max) @ Id 5.5V @ 8mA 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 267 nC @ 10 V -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 8700 pF @ 25 V -
FET Feature - -
Power Dissipation (Max) 568W (Tc) 600W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount Chassis Mount
Supplier Device Package SOT-227B SOT-227B
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC