IXFN120N20 vs IXFN120N25

Product Attributes

Part Number IXFN120N20 IXFN120N25
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXFN120N20 IXFN120N25
Product Status Not For New Designs Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 250 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 120A
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 17mOhm @ 500mA, 10V -
Vgs(th) (Max) @ Id 4V @ 8mA -
Gate Charge (Qg) (Max) @ Vgs 360 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 9100 pF @ 25 V -
FET Feature - -
Power Dissipation (Max) 600W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Chassis Mount Chassis Mount
Supplier Device Package SOT-227B SOT-227B
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC