IXFK55N50 vs IXFL55N50

Product Attributes

Part Number IXFK55N50 IXFL55N50
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXFK55N50 IXFL55N50
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 55A (Tc) 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 90mOhm @ 27.5A, 10V -
Vgs(th) (Max) @ Id 4.5V @ 8mA -
Gate Charge (Qg) (Max) @ Vgs 330 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 9400 pF @ 25 V -
FET Feature - -
Power Dissipation (Max) 625W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Through Hole Through Hole
Supplier Device Package TO-264AA (IXFK) ISOPLUS264™
Package / Case TO-264-3, TO-264AA TO-264-3, TO-264AA