IXFN38N100Q2 vs IXFL38N100Q2

Product Attributes

Part Number IXFN38N100Q2 IXFL38N100Q2
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXFN38N100Q2 IXFL38N100Q2
Product Status Not For New Designs Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 38A (Tc) 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 250mOhm @ 19A, 10V 280mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA 5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 250 nC @ 10 V 250 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 7200 pF @ 25 V 13500 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 890W (Tc) 380W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount Through Hole
Supplier Device Package SOT-227B ISOPLUS264™
Package / Case SOT-227-4, miniBLOC TO-264-3, TO-264AA