IXFK50N50 vs IXFK55N50

Product Attributes

Part Number IXFK50N50 IXFK55N50
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXFK50N50 IXFK55N50
Product Status Not For New Designs Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 80mOhm @ 25A, 10V 90mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 8mA 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 330 nC @ 10 V 330 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 9400 pF @ 25 V 9400 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 560W (Tc) 625W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-264AA (IXFK) TO-264AA (IXFK)
Package / Case TO-264-3, TO-264AA TO-264-3, TO-264AA