IXFK32N100X vs IXFK32N100P

Product Attributes

Part Number IXFK32N100X IXFK32N100P
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXFK32N100X IXFK32N100P
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 32A (Tc) 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 220mOhm @ 16A, 10V 320mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 6V @ 4mA 6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V 225 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 4075 pF @ 25 V 14200 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 890W (Tc) 960W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-264 TO-264AA (IXFK)
Package / Case TO-264-3, TO-264AA TO-264-3, TO-264AA