IXFK170N10P vs IXFK170N10

Product Attributes

Part Number IXFK170N10P IXFK170N10
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXFK170N10P IXFK170N10
Product Status Active Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 170A (Tc) 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 500mA, 10V 10mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 4mA 4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 198 nC @ 10 V 515 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6000 pF @ 25 V 10300 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 715W (Tc) 560W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-264AA (IXFK) TO-264AA (IXFK)
Package / Case TO-264-3, TO-264AA TO-264-3, TO-264AA