IXFK160N30T vs IXFK120N30T

Product Attributes

Part Number IXFK160N30T IXFK120N30T
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXFK160N30T IXFK120N30T
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V 300 V
Current - Continuous Drain (Id) @ 25°C 160A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 19mOhm @ 60A, 10V 24mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 335 nC @ 10 V 265 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 28000 pF @ 25 V 20000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1390W (Tc) 960W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-264AA (IXFK) TO-264AA (IXFK)
Package / Case TO-264-3, TO-264AA TO-264-3, TO-264AA