IXFH9N80 vs IXFH8N80

Product Attributes

Part Number IXFH9N80 IXFH8N80
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXFH9N80 IXFH8N80
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc) 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 500mA, 10V 1.1Ohm @ 4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 2.5mA 4.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V 130 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2600 pF @ 25 V 2600 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 180W (Tc) 180W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247AD (IXFH) TO-247AD (IXFH)
Package / Case TO-247-3 TO-247-3