IXFH50N85X vs IXFH20N85X

Product Attributes

Part Number IXFH50N85X IXFH20N85X
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXFH50N85X IXFH20N85X
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 850 V 850 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 105mOhm @ 500mA, 10V 330mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5.5V @ 4mA 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 152 nC @ 10 V 63 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 4480 pF @ 25 V 1660 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 890W (Tc) 540W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247 (IXTH) TO-247 (IXTH)
Package / Case TO-247-3 TO-247-3