IXFH12N100P vs IXFH12N120P

Product Attributes

Part Number IXFH12N100P IXFH12N120P
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXFH12N100P IXFH12N120P
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1200 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.05Ohm @ 6A, 10V 1.35Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 1mA 6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V 103 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 4080 pF @ 25 V 5400 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 463W (Tc) 543W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247AD (IXFH) TO-247AD (IXFH)
Package / Case TO-247-3 TO-247-3