IXFC26N50P vs IXFC36N50P

Product Attributes

Part Number IXFC26N50P IXFC36N50P
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXFC26N50P IXFC36N50P
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 15A (Tc) 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 260mOhm @ 13A, 10V 190mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 5.5V @ 4mA 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V 93 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 3600 pF @ 25 V 5500 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 130W (Tc) 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package ISOPLUS220™ ISOPLUS220™
Package / Case ISOPLUS220™ ISOPLUS220™