IXFC12N80P vs IXFC14N80P

Product Attributes

Part Number IXFC12N80P IXFC14N80P
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXFC12N80P IXFC14N80P
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc) 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 930mOhm @ 6A, 10V 770mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 5.5V @ 2.5mA 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 51 nC @ 10 V 61 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2800 pF @ 25 V 3900 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 120W (Tc) 130W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package ISOPLUS220™ ISOPLUS220™
Package / Case ISOPLUS220™ ISOPLUS220™