IXFC10N80P vs IXFC12N80P

Product Attributes

Part Number IXFC10N80P IXFC12N80P
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXFC10N80P IXFC12N80P
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc) 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V
Rds On (Max) @ Id, Vgs - 930mOhm @ 6A, 10V
Vgs(th) (Max) @ Id - 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs - 51 nC @ 10 V
Vgs (Max) - ±30V
Input Capacitance (Ciss) (Max) @ Vds - 2800 pF @ 25 V
FET Feature - -
Power Dissipation (Max) - 120W (Tc)
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package ISOPLUS220™ ISOPLUS220™
Package / Case ISOPLUS220™ ISOPLUS220™