IXFH10N80P vs IXFC10N80P

Product Attributes

Part Number IXFH10N80P IXFC10N80P
Manufacturer IXYS IXYS
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IXFH10N80P IXFC10N80P
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 1.1Ohm @ 5A, 10V -
Vgs(th) (Max) @ Id 5.5V @ 2.5mA -
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V -
Vgs (Max) ±30V -
Input Capacitance (Ciss) (Max) @ Vds 2050 pF @ 25 V -
FET Feature - -
Power Dissipation (Max) 300W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247AD (IXFH) ISOPLUS220™
Package / Case TO-247-3 ISOPLUS220™